Recent Research on Non-Lithographic Fabrication of Ni-Se Heterojunction Nanowires and Their Electrical Characterization

In this paper, heterojunction nanowires of Ni-Se are fabricated via template-assisted electrodeposition
process. Nanowires are characterized by scanning electron microscopy (SEM), Energy dispersive XRay
Spectroscopy (EDS), X-ray diffractometry and electrical transport studies. SEM photographs
reveal the uniform and dense growth of Ni-Se nanowires. X-ray diffraction pattern shows the
crystalline nature of Ni-Se nanowires. EDS spectrum shows the much higher percentage of Ni as
compared to Se. A collective current-voltage characteristic of heterojunction nanowires shows the
resonant tunneling diodes (RTDs) like behavior with peak to valley current ratio 1.37 at room
temperature. This method is suitable to synthesize mono dispersive nanowires of desired diameter
and length. Peak current is observed at low voltage which is an important feature and offers the
possibility of fabricating low-power dissipation electronic devices.